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BAW75
Features
* Silicon epitaxial planar diode * Fast switching diodes * 500mW power dissipation * This diode is also available in the Mini-MELF case with the type designation LL4148
SMALL SIGNAL SWITCHING DIODES
DO-35(GLASS)
0.075(1.9) MAX. DIA.
1.083(27.5) MIN.
0.154(3.9) MAX.
Mechanical Data
* Case: DO-35 glass case * Polarity: Color band denotes cathode end * Weight: Approx. 0.13 gram
0.020(0.52) MAX. DIA.
1.083(27.5) MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25E ambient temperature unless otherwise specified)
Type B AW75
Type Differentiation V R R M = 35 V
Ordering C ode B AW75TAP
R emarks Ammopack
A bs olute Maximum R atings
T j = 25 C P arameter R epetitive peak revers e voltage R evers e voltage P eak forward s urge current R epetitive peak forward current F orward current Average forward current P ower dis s ipation J unction temperature S torage temperature range Tes t C onditions Type S ymbol VR R M VR IF S M IF R M IF I FAV PV PV Tj Ts tg Value 35 25 2000 450 300 150 440 500 200 65...+200 Unit V V mA mA mA mA mW mW
E E
tp=1 s
V R =0 l=4 mm, T L =45 E l=4 mm, T L 25 E
Maximum T hermal R es is tanc e
T j = 25 E P arameter J unction ambient Tes t C onditions l=4 mm, T L =cons tant S ymbol R thJ A Value 350 Unit K /W
BAW75
Features
SMALL SIGNAL SWITCHING DIODES
E lec tric al C harac teris tic s
T j = 25 E P arameter F orward voltage R evers e current B reakdown voltage Diode capacitance R evers e recovery time Tes t C onditions I F =30mA V R =25 V V R =25 V, T j=150 E I R =5 A, tp/T =0.01, tp=0.3ms V R =0, f=1MHz, V HF =50mV I F =I R =10mA, iR =1mA I F =10mA, V R =6V, iR =1mA, R L =100 Type S ymbol VF IR IR V (B R ) CD trr trr Min Typ Max 1 100 100 4 4 2 Unit V nA A V pF ns ns
35

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